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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.11 No.3
- 발행연도
- 2011.9
- 수록면
- 169 - 181 (13page)
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초록· 키워드
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In this present paper, a comprehensive drain current model incorporating the effects of channel length modulation has been presented for multi-layered gate material engineered trapezoidal recessed channel (MLGME-TRC) MOSFET and the expression for linearity performance metrics, i.e. higher order transconductance coefficients: gm<SUB>1</SUB>, gm<SUB>2</SUB>, gm<SUB>3</SUB>, and figure-of-merit (FOM) metrics; V<SUB>IP2</SUB>, V<SUB>IP3</SUB>, IIP3 and I-dB compression point, has been obtained. It is shown that, the incorporation of multi-layered architecture on gate material engineered trapezoidal recessed channel (GME-TRC) MOSFET leads to improved linearity performance in comparison to its conventional counterparts trapezoidal recessed channel (TRC) and rectangular recessed channel (RRC) MOSFETs, proving its efficiency for low-noise applications and future ULSI production. The impact of various structural parameters such as variation of work function, substrate doping and source/drain junction depth (X<SUB>j</SUB>) or negative junction depth (NJD) have been examined for GME- TRC MOSFET and compared its effectiveness with MLGME-TRC MOSFET. The results obtained from proposed model are verified with simulated and experimental results. A good agreement between the results is obtained, thus validating the model.
목차
Abstract
I. INTRODUCTION
II. FABRICATION FEASIBILITY OF GME-TRC MOSFET
III. STRUCTURE DESCRIPTION
IV. MODEL FORMULATION
V. RESULTS AND DISCUSSION
VI. CONCLUSIONS
REFERENCES
참고문헌 (30)
참고문헌 신청
1. [학술지(정기간행물)] - T.Y.Yum / 2006 / High-Efficiency Linear RF Amplifier-A Unified Circuit Approach to Achieving Compactness and Low Distortion / IEEE Trans. Microw. Theory Tech 54 : 3255 ~ 3266
2. [학술지(정기간행물)] - C.Yu / 2004 / MOSFET Linearity Performance Degradation Subject to Drain and Gate Voltage Stress / IEEE Trans. Device Mater. Rel 4 : 681 ~ 689
3. [학술지(정기간행물)] - 정윤하 / 200601 / A novel phase measurement technique for IM3 components in RF power amplifiers / IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 54 (1) : 451 ~ 457
4. [단행본] - B.Razavi / 1998 / RF Microelectronics / Prentice-Hall
5. [학술대회논문] - P. Malik / 2010 / Linearity Performance Assessment of Nanoscale Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET for RFIC design and Wireless application / Nanotech conference and Expo 2010 : 705 ~ 708
2. [학술지(정기간행물)] - C.Yu / 2004 / MOSFET Linearity Performance Degradation Subject to Drain and Gate Voltage Stress / IEEE Trans. Device Mater. Rel 4 : 681 ~ 689
3. [학술지(정기간행물)] - 정윤하 / 200601 / A novel phase measurement technique for IM3 components in RF power amplifiers / IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 54 (1) : 451 ~ 457
4. [단행본] - B.Razavi / 1998 / RF Microelectronics / Prentice-Hall
5. [학술대회논문] - P. Malik / 2010 / Linearity Performance Assessment of Nanoscale Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET for RFIC design and Wireless application / Nanotech conference and Expo 2010 : 705 ~ 708
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UCI(KEPA) : I410-ECN-0101-2013-569-001235628