지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
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초록· 키워드
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Ga₂O₃-doped SnO₂ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to 600℃). The best opto-electrical properties is shown by the film deposited at substrate temperature of 300℃ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is 9.57 × 10?³ Ω ㎝ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.
목차
Abstract
1. Introduction
2. Experimental Details
3. Results and Discussion
4. Conclusions
Acknowledgements
References
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UCI(KEPA) : I410-ECN-0101-2013-581-000347447