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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2011.5
- 수록면
- 2,419 - 2,426 (8page)
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초록· 키워드
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Today, Gate Commutated Thyristors (GCTs) are used in high power converters due to their high current switching and high voltage blocking capabilities. The optimization of these power switches is of utmost importance in order to increase the efficiency of the complete system. To achieve that, a novel semiconductor device was introduced, the Dual-GCT [1][2].
In this paper, a Gate Drive Unit (GDU) for the Dual-GCT is presented. Compared to standard IGCTs a size reduction of one third is achieved with equal switching capabilities. Additionally, extended functionalities that are usually not implemented in commercial drivers is introduced to obtain a better performance during the operation of the semiconductor device. Furthermore a Short Circuit Protection is described in detail which detects the short circuit in around 80 ㎱.
In this paper, a Gate Drive Unit (GDU) for the Dual-GCT is presented. Compared to standard IGCTs a size reduction of one third is achieved with equal switching capabilities. Additionally, extended functionalities that are usually not implemented in commercial drivers is introduced to obtain a better performance during the operation of the semiconductor device. Furthermore a Short Circuit Protection is described in detail which detects the short circuit in around 80 ㎱.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. HARDWARE SETUP AND TESTS
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. THE DUAL-GCT GATE DRIVE UNIT
Ⅴ. CONCLUSIONS AND OUTLOOK
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UCI(KEPA) : I410-ECN-0101-2013-560-000302154