지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2011.5
- 수록면
- 453 - 459 (7page)
이용수
초록· 키워드
오류제보하기
Modern microprocessors are predominately powered by the Switched-Mode Power Supplies. Fast switching of the power MOSFETs causes high-frequency voltage and current oscillations in the loop formed by the input decoupling and the MOSFETs. Such oscillations generate significant and broadband EMI noise. Conventional techniques to suppress this noise such as using snubbers, increasing MOSFET gate resistance or employing smaller MOSFETs result in higher power loss, shorter batter life and expensive cooling. This paper proposes an alternative approach to mitigate the EMI based on careful design of input decoupling. The paper shows how input decoupling can be optimized to provide low resistance path for low frequency ripple of the input current, while forcing high-frequency current to flow through a high resistance path. This method effectively increases the decay rate of the oscillations, which in turn decreases the EMI. This method was verified on two laptop designs and the experimental results showed 6㏈ of EMI reduction with no measurable degradation in the power efficiency.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. SOURCES OF RADIATED EMI IN AN SBC
Ⅲ. ANALYSIS OF THE OSCILLATION LOOP IN AN SBC
Ⅳ. SUPPRESSING RADIATED EMI NOISE WITH HIGH ESR INPUT DECOUPLING
Ⅴ. EXPERIMENTAL VERIFICATION
Ⅵ. DESIGN PROCEDURES AND PRACTICAL IMPLEMENTATION METHODS
Ⅶ. CONCLUSIONS
REFERENCES
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UCI(KEPA) : I410-ECN-0101-2013-560-000299287