지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.11 No.2
- 발행연도
- 2011.6
- 수록면
- 121 - 129 (9page)
이용수
초록· 키워드
오류제보하기
It is progressing as new advents and remarkable developments of mobile device every year. On the upper line reason, NAND FLASH large density memory demands which can be stored into portable devices have been dramatically increasing. Therefore, the cell size of the NAND Flash memory has been scaled down by merely 50% and has been doubling density each per year. [1] However, side effects have arisen the cell distribution and reliability characteristics related to coupling interference, channel disturbance, floating gate electron retention, write-erase cycling owing to shrinking around 20㎚ technology. Also, FLASH controller to manage shrink effect leads to speed and current issues. In this paper, It will be introduced to solve cycling, retention and fail bit problems of sub-deep micron shrink such as Virtual negative read used in moving read, randomization. The characteristics of retention, cycling and program performance have 3 K per 1 year and 12.7 MB/s respectively. And device size is 179.32 ㎟ (16.79 ㎜ × 10.68 ㎜) in 3 metal 26 ㎚ CMOS.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. CHIP ARCHITECTURE
Ⅲ. OVERCOME SCALING PROBLEMS
Ⅳ. PERFORMANCE ENHANCEMENT
Ⅴ. CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES
참고문헌 (0)
참고문헌 신청이 논문의 저자 정보
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-ECN-0101-2013-569-000410778