지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2011.7
- 수록면
- 606 - 611 (6page)
이용수
초록· 키워드
오류제보하기
Power electronics is a key technology for electric, hybrid, plug-in hybrid, and fuel cell vehicles. Typical power electronics converters used in electric drive vehicles include dc/dc converters, inverters, and battery chargers. New semiconductor materials such as silicon carbide (SiC) and novel topologies such as the Z-source inverter (ZSI) have a great deal of potential to improve the overall performance of these vehicles. In this paper, a Z-source inverter for fuel cell vehicle application is examined under three different scenarios. 1. a ZSI with Si IGBT modules, 2. a ZSI with hybrid modules, Si IGBTs/SiC Schottky diodes, and 3. a ZSI with SiC MOSFETs/SiC Schottky diodes. Then, a comparison of the three scenarios is conducted. Conduction loss, switching loss, reverse recovery loss, and efficiency are considered for comparison. A conclusion is drawn that the SiC devices can improve the inverter and inverter-motor efficiency, and reduce the system size and cost due to the low loss properties of SiC devices. A comparison between a ZSI and traditional PWM inverters with SiC devices is also presented in this paper. Based on this comparison, the Z-source inverter produces the highest efficiency.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. SYSTEM CONFIGURATIONS AND CONTROL
Ⅲ. MODELING OF SEMICONDUCTOR POWER LOSSES OF THE ZSI
Ⅳ. COMPARISON EXAMPLE
Ⅴ. COMPARISON OF LOSSES AND EFFICIENCY
Ⅵ. COMPARISON BETWEEN A Z-SOURCE INVERTER AND A CONVENTIONAL PWM INVERTER
Ⅶ. CONCLUSIONS
REFERENCES
참고문헌 (9)
참고문헌 신청
C. Mi / 2008 / Topology, design, analysis, control, and thermal management of power electronics for electric, hybrid electric, and fuel cell vehicles / International Journalon Hybrid and Electric Vehicles 1(3):276~294
B. Ozpineci / 2003 / Characterization of SiC schottky diodes at different temperatures / IEEE Power Electronics Letters 1(2):54~57
A. Elasser / 2003 / A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications / IEEE Trans. on Ind. Appl 39(4):915~921
B. Ozpineci / 2009 / A 55-kW Three-phase inverter with Si IGBTs and SiC schottky diodes / IEEE Trans. Ind. Appl 45(1):278~285
F. Z. Peng / 2003 / Z-Source Inverter / IEEE Trans. Ind. Appl 39(2):504~510
B. Ozpineci / 2003 / Characterization of SiC schottky diodes at different temperatures / IEEE Power Electronics Letters 1(2):54~57
A. Elasser / 2003 / A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications / IEEE Trans. on Ind. Appl 39(4):915~921
B. Ozpineci / 2009 / A 55-kW Three-phase inverter with Si IGBTs and SiC schottky diodes / IEEE Trans. Ind. Appl 45(1):278~285
F. Z. Peng / 2003 / Z-Source Inverter / IEEE Trans. Ind. Appl 39(2):504~510
이 논문의 저자 정보
이 논문과 함께 이용한 논문
차세대 전력반도체 SiC MOSFET의 스위칭 특성 및 효율에 관한 연구
최원묵
,
안호균
한국정보통신학회논문지
2017
.02
전동기 구동용 SiC MOSFET 인버터의 NEMA 규격 만족을 위한 출력 필터 구조에 관한 연구
백승훈
,
조영훈
,
조병극
외 1명
전력전자학회 학술대회 논문집
2016
.11
Inlay PCB를 적용한 차량용 전력반도체 스위치 모듈의 열/전기적 특성 분석 및 최적화 설계
박재현
,
임창종
,
임혜원
외 1명
대한전자공학회 학술대회
2016
.06
SiC를 이용한 전기버스용 3kW 고효율 저전압 전력변환장치 개발
강민혁
,
정은진
,
강찬호
외 1명
전력전자학회 학술대회 논문집
2016
.07
An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs
Mei Liang
,
T
,
illion Q. Zheng
외 1명
JOURNAL OF POWER ELECTRONICS
2016
.01
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-ECN-0101-2013-560-000410031