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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.3 No.2
- 발행연도
- 2008.6
- 수록면
- 276 - 279 (4page)
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초록· 키워드
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We report on the enhancement of cathode-luminescence in an In<SUB>x</SUB>Ga<SUB>1-x</SUB>N/In<SUB>y</SUB>Ga<SUB>1-y</SUB>N green light emitting diode structure using two-dimensional photonic crystals. The square lattice arrays of photonic crystals with diameter/periodicity of 200/500 ㎚ were fabricated by electron beam lithography. Inductively coupled plasma dry etching was used to etch and define photonic crystals. Three samples with different etch depths, i.e., 170, 95, and 65 ㎚, were constructed. Field emission scanning electron microscope analysis shows that air holes of photonic crystal structure with inverted-cone shapes were fabricated after dry etching. Cathode-luminescence measurement indicated that up to 30-fold enhancement of cathode-luminescence intensity has been achieved.
목차
Abstract
1. Introduction
2. Sample Fabrication
3. Result and discussion
4. Conclusion
References
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