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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2007.9
- 수록면
- 133 - 137 (5page)
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초록· 키워드
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We compare electroabsorption modulators (EAMs) with multiple quantum wells (MQWs) based on InGaAs(P)/InP and InGa(Al)As/InAlAs material systems. We carefully choose the quantumwell structures so that the structures based on different material systems have similar band-offset energies and excition-peak wavelengths. Assuming the same light wavelength of 1.55 ㎛, we show the transfer functions of EAMs with each quantum-well structure and calculate the escape times of photogenerated charge carriers. As the heavy-hole escape time of the quantum well based on InGaAs(P)/InP is much longer than those of photogenerated charge carriers of InGa(Al)As/InAlAs, the EAM based on the InGa(Al)As/InAlAs material seems to be more suitable for highoptical-power operation.
목차
Ⅰ. INTRODUCTION
Ⅱ. PRIOR WORKS
Ⅲ. QW STRUCTURES CONSIDERED IN THIS WORK
Ⅳ. COMPARISON OF QWs BASED ON DIFFERENT MATERIAL SYSTEMS
Ⅴ. CONCLUSION
ACKNOWLEDGEMENT
REFERENCES
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UCI(KEPA) : I410-ECN-0101-2009-425-015936465