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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2005.9
- 수록면
- 108 - 112 (5page)
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GaAs nanowires were grown on GaAs (111)B substrates in a gas source molecular beam epitaxy system, using self-assembled Au particles with diameters between 25 and 200 ㎚ as the catalytic agents. The growth rate and structure of the nanowires were investigated for substrate temperatures between 500 and 600 ℃ to study the mass transport mechanisms that drive the growth of these crystals. The possibilities for fabrication of novel magnetic nanostructures by suitable choice of growth conditions are discussed.
목차
Abstract
1. Introduction
2. Experimental Details
3. Results
4. Discussion
5. Conclusions
Acknowledgements
References
참고문헌 (25)
참고문헌 신청
Y. W. Heo , 2004 , Mat. Sci. Eng. R 47, 1 (2004) , Mat. Sci. Eng.
H.-J. Choi , 2005 , Adv. Mater. 17, 1351 (2005) , Adv. Mater.
J. M. Baik , 2005 , J. Vac. Sci. Technol. B 23(2), 530 (2005) , J. Vac. Sci. Technol.
Y. Sun , 2005 , Adv. Funct. Mater. 15, 30 (2005) , Adv. Funct. Mater.
J. Motohisa , 2004 , J. Cryst. Growth 272, 180 (2004) , J. Cryst. Growth
H.-J. Choi , 2005 , Adv. Mater. 17, 1351 (2005) , Adv. Mater.
J. M. Baik , 2005 , J. Vac. Sci. Technol. B 23(2), 530 (2005) , J. Vac. Sci. Technol.
Y. Sun , 2005 , Adv. Funct. Mater. 15, 30 (2005) , Adv. Funct. Mater.
J. Motohisa , 2004 , J. Cryst. Growth 272, 180 (2004) , J. Cryst. Growth
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