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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2003.12
- 수록면
- 138 - 141 (4page)
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초록· 키워드
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Ni_(0.65)Zn_(0.35)Cu_xFe_(2-x)O₄ thin films were prepared by using a sol-gel method. Their crystallographic, dielectric and magnetic properties were investigated as a function of Cu contents by means of an X-ray diffractometer (XRD), X-ray reflectivity, LCZ meter (NF2232), a vibrating sample magnetometer (VSM), and an atomic force microscope (AFM). From typical C-V measurements for Ni_(0.65)Zn_(0.35)Cu_xFe_(2-x)O₄ thin films on p-type silicon substrate, the surface charge density was calculated as 1.4 μC/㎡. The dielectric constant evaluated from the capacitance at the accumulation state was 28. The high Hc and low Msat at x=0.0 and 0.1 were due to the growth of the α- Fe₂O₃ phase having antiferromagnetic properties. The rapidly decreased Hc and increased Msat at x=0.2 and 0.3 can be explained that the α- Fe₂O₃ phases have completely disappeared at x=0.3 and so, non-magnetic defects are minimized. The Msat was slightly decreased and the Hc was increased above at x=0.3 because the increase of grain boundary due to smaller grain size acts as defects during magnetization process.
목차
Abstract
1. Introduction
2. Experimental
3. Results and Discussion
4. Conclusions
Acknowledgement
References
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