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The effect of small addition of Nb on the electrical resistivity and Hall coefficient of the amorphous Fe_(83)Zr_7B_(10) alloy and annealed ones below the crystallization temperature were investigated, which has been considered to be suitable for high frequency core material. At room temperature, their resistivities ρ and the spontaneous Hall coefficients Rs are ~1.6 μΩm and -3 × 10^(-8) ㎥/As, respectively. Rs and ρ are decreased with increasing temperature from 100 K to room temperature. Side-jump effect was adopted to analyze the effect of the small variation of concentration and annealing. The quantity of Rs/ρ² at room temperature, which is directly related to the electronic structure of the mother alloy, remained almost a constant except as quenched one as it can be predicted from the side-jump effect. The unexpected temperature dependence of Rs/ρ² measured at low fields much below Tc is left as a question.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. EXPERIMENT
Ⅲ. RESULTS AND DISCUSSIONS
Ⅳ. CONCLUSIONS
REFERENCES
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UCI(KEPA) : I410-ECN-0101-2009-428-015148420