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Design and fabrication issues for an L-band GaAs Monolithic Microwave Integrated Circuit(MMIC) Voltage Controlled Oscillator(VCO) as a component of Personal Communications Systems(PCS) Radio Frequency(RF) transceiver are discussed. An ion-implanted GaAs MESFET tailored toward low current and low noise with 0.5 nun gate length and 300 mm gate width has been used as an active device, while an FET with the drain shorted to the source has been used as the voltage variable capacitor. The principal design was based on a self-biased FET with capacitive feedback. A tuning range of 140 MHz and 58 MHz has been obtained by 3 V change for a 600 mm and a 300 mm devices, respectively. The oscillator output power was 6.5 dBm with 14 mA DC current supply at 36 V. The phase noise without any buffer or PLL was 93 dB/1Hz at 100 KHz offset. Harmonic balance analysis was used for the non-linear simulation after a linear simulation. All layout induced parasitics were incorporated into the simulation with EEFET2 non-linear PET model. The fabricated circuits were measured using a coplanar-type probe for bare chips and test jigs with ceramic packages.

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Abstract

Ⅰ. Introduction

Ⅱ. Computer Aided Design

Ⅲ. Fabrication and Measurement

Ⅳ. Conclusion

Acknowledgement

References

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UCI(KEPA) : I410-ECN-0101-2009-569-017765232