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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2003.11
- 수록면
- 1,926 - 1,932 (7page)
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초록· 키워드
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We have applied spectroscopic ellipsometry to investigate high-k dielectric thin films and
correlate their optical properties with fabrication processes, in particular, with high temperature
annealing. The use of high-k dielectrics such as HfO2, Ta2 O5, TiO2 , and ZrO2 as the replacement
for SiO2 as the gate dielectric in CMOS devices has received much attention recently due to its
high dielectric constant. From the characteristics found in the pseudo-dielectric functions or the
Tauc-Lorentz dispersions, the optical properties such as optical band gap, polycrystallization, and
optical density will be discussed.
correlate their optical properties with fabrication processes, in particular, with high temperature
annealing. The use of high-k dielectrics such as HfO2, Ta2 O5, TiO2 , and ZrO2 as the replacement
for SiO2 as the gate dielectric in CMOS devices has received much attention recently due to its
high dielectric constant. From the characteristics found in the pseudo-dielectric functions or the
Tauc-Lorentz dispersions, the optical properties such as optical band gap, polycrystallization, and
optical density will be discussed.
목차
Abstract
1.서론
2.타원 계측기술의 기본원리
3.고굴절률 게이트 산화물질을 위한 분산모델
4.고굴절률 게이트 산화물질의 유전함수
4.결론
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UCI(KEPA) : I410-ECN-0101-2009-550-014219616